Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai

• Main Author: Sivanathan , Pariasamy @ Chelladurai
• Format: Thesis
• Published: 2018
• Subjects: Q Science (General)
• Online Access: http://studentsrepo.um.edu.my/9526/1/Sivanathan.pdf; http://studentsrepo.um.edu.my/9526/9/sivanathan.pdf; http://studentsrepo.um.edu.my/9526/

The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission via metal-organic chemical vapor deposition (MOCVD). The homoepitaxy growth of GaN-on-GaN gives an unprecedented high performance with low defect density, high-quality crystal, simplified LED architectures (short process flow) and overall lower cost. The optimizations of InGaN/GaN MQWs on n-type GaN substrate for blue emission at 445-455 nm range were carried out. The high quality 6 pairs of multi-quantum wells with InGaN quantum wells and GaN quantum barriers were grown at different temperatures (650�to 780�). The lowest defect density demonstrated at 1.3�107 cm