Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai
The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission via metal-organic chemical vapor deposition (MOCVD). The homoepitaxy growth of GaN-on-GaN gives an unprecedented high performance with low defect density, high-quality crystal, simplified LED arch...
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| Format: | Thesis |
| Published: |
2018
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| Online Access: | http://studentsrepo.um.edu.my/9526/1/Sivanathan.pdf http://studentsrepo.um.edu.my/9526/9/sivanathan.pdf http://studentsrepo.um.edu.my/9526/ |
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| Summary: | The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for
blue light emission via metal-organic chemical vapor deposition (MOCVD). The homoepitaxy
growth of GaN-on-GaN gives an unprecedented high performance with low defect
density, high-quality crystal, simplified LED architectures (short process flow) and overall
lower cost. The optimizations of InGaN/GaN MQWs on n-type GaN substrate for blue
emission at 445-455 nm range were carried out. The high quality 6 pairs of multi-quantum
wells with InGaN quantum wells and GaN quantum barriers were grown at different
temperatures (650�to 780�). The lowest defect density demonstrated at 1.3�107 cm |
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