Compositional and structural characterization of Heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction

• Main Authors: Ali, A.H., Shuhaimi, A., Hassan, Z., Yusoff, Y.
• Format: Article
• Language: English
• Published: Trans Tech Publications, Switzerland 2013
• Subjects: Q Science (General); QC Physics
• Online Access: http://eprints.um.edu.my/9782/1/00011485_86654.pdf; http://eprints.um.edu.my/9782/

This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW) active layer. Phase analysis 2θ-scan proved the composition of GaN (0002) and (0004) at 34.63o and 72.98o,respectively. Rocking curve φ-scan showed six significant peaks of the hexagonal GaN structures with consistent angular gaps of ~60o. From x-ray rocking curve (XRC) ω-scan, screw and mix dislocation density is found as 2.85 × 109 cm-2, while pure edge dislocation density is found as 2.23 × 1011 cm-2.