Compositional and structural characterization of Heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction
This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW) active layer. Phase...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Trans Tech Publications, Switzerland
2013
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/9782/1/00011485_86654.pdf http://eprints.um.edu.my/9782/ |
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| Summary: | This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW)
active layer. Phase analysis 2θ-scan proved the composition of GaN (0002) and (0004) at 34.63o and 72.98o,respectively. Rocking curve φ-scan showed six significant peaks of the hexagonal GaN structures with consistent angular gaps of ~60o. From x-ray rocking curve (XRC) ω-scan, screw and mix dislocation density is found as 2.85 × 109 cm-2, while pure edge dislocation density is found as 2.23 × 1011 cm-2. |
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