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Photoconductivity in pulsed PECVD hydrogenated amorphous silicon thin films

Hydrogenated Amorphous Silicon (a-Si:H) thin films were deposited using a pulsed plasma enhanced chemical vapor deposition (PECVD) system developed in our laboratory. The pulsed discharge has been shown to allow deposition at higher power without deteriorating the film properties. In this work, we r...

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Main Authors: Tong, Goh Boon, Han, Shi Chee, Richard, Ritikos, Rasat, Muhamat Muhamad, Abdul, Rahman Saadah
Format: Article
Published: 2006
Subjects:
QC Physics
Online Access:http://eprints.um.edu.my/7370/
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spelling my.um.eprints.73702013-07-16T01:06:59Z http://eprints.um.edu.my/7370/ Photoconductivity in pulsed PECVD hydrogenated amorphous silicon thin films Tong, Goh Boon Han, Shi Chee Richard, Ritikos Rasat, Muhamat Muhamad Abdul, Rahman Saadah QC Physics Hydrogenated Amorphous Silicon (a-Si:H) thin films were deposited using a pulsed plasma enhanced chemical vapor deposition (PECVD) system developed in our laboratory. The pulsed discharge has been shown to allow deposition at higher power without deteriorating the film properties. In this work, we report our work on the photoconductivity studies done on this pulsed PECVD a-Si:H films. Photoconductivity in these films showed strong dependence on the discharge power and silane flow-rate. Optical parameters obtained from the optical transmission spectra in the ultra-violet visible region of these films were analyzed together with the photoconductivity results. This analysis was used to explain the effects of discharge power on the photoconductivity of the pulsed PECVD a-SiH thin film. 2006 Article PeerReviewed Tong, Goh Boon and Han, Shi Chee and Richard, Ritikos and Rasat, Muhamat Muhamad and Abdul, Rahman Saadah (2006) Photoconductivity in pulsed PECVD hydrogenated amorphous silicon thin films. Jurnal Fizik Malaysia, 27 (3 & 4). pp. 121-123. ISSN 0128-0333
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QC Physics
spellingShingle QC Physics
Tong, Goh Boon
Han, Shi Chee
Richard, Ritikos
Rasat, Muhamat Muhamad
Abdul, Rahman Saadah
Photoconductivity in pulsed PECVD hydrogenated amorphous silicon thin films
description Hydrogenated Amorphous Silicon (a-Si:H) thin films were deposited using a pulsed plasma enhanced chemical vapor deposition (PECVD) system developed in our laboratory. The pulsed discharge has been shown to allow deposition at higher power without deteriorating the film properties. In this work, we report our work on the photoconductivity studies done on this pulsed PECVD a-Si:H films. Photoconductivity in these films showed strong dependence on the discharge power and silane flow-rate. Optical parameters obtained from the optical transmission spectra in the ultra-violet visible region of these films were analyzed together with the photoconductivity results. This analysis was used to explain the effects of discharge power on the photoconductivity of the pulsed PECVD a-SiH thin film.
format Article
author Tong, Goh Boon
Han, Shi Chee
Richard, Ritikos
Rasat, Muhamat Muhamad
Abdul, Rahman Saadah
author_facet Tong, Goh Boon
Han, Shi Chee
Richard, Ritikos
Rasat, Muhamat Muhamad
Abdul, Rahman Saadah
author_sort Tong, Goh Boon
title Photoconductivity in pulsed PECVD hydrogenated amorphous silicon thin films
title_short Photoconductivity in pulsed PECVD hydrogenated amorphous silicon thin films
title_full Photoconductivity in pulsed PECVD hydrogenated amorphous silicon thin films
title_fullStr Photoconductivity in pulsed PECVD hydrogenated amorphous silicon thin films
title_full_unstemmed Photoconductivity in pulsed PECVD hydrogenated amorphous silicon thin films
title_sort photoconductivity in pulsed pecvd hydrogenated amorphous silicon thin films
publishDate 2006
url http://eprints.um.edu.my/7370/
_version_ 1643688027554316288
score 13.214268

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