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Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth

A simple gain-flattened L-band erbium-doped fiber amplifier (EDFA) is demonstrated, utilizing unwanted C-band amplified spontaneous emission (ASE) to enhance L-bulld gain performance. An L-band flat gain range of 50 nm (1560-1610 nm) is achieved for use in wavelength-division multiplexing (WDM) tran...

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Main Authors: Adikan, Faisal Rafiq Mahamd, Mahdi, M.A., Thirumeni, S., Poopalan, Prabakaran, Dimyati, Kaharudin, Ahmad, Harith
Format: Article
Published: John Wiley & Sons 2001
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.um.edu.my/4710/
https://doi.org/10.1002/1098-2760(20010320)28:6<399::AID-MOP1053>3.0.CO;2-S
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spelling my.um.eprints.47102018-10-17T08:47:11Z http://eprints.um.edu.my/4710/ Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth Adikan, Faisal Rafiq Mahamd Mahdi, M.A. Thirumeni, S. Poopalan, Prabakaran Dimyati, Kaharudin Ahmad, Harith TK Electrical engineering. Electronics Nuclear engineering A simple gain-flattened L-band erbium-doped fiber amplifier (EDFA) is demonstrated, utilizing unwanted C-band amplified spontaneous emission (ASE) to enhance L-bulld gain performance. An L-band flat gain range of 50 nm (1560-1610 nm) is achieved for use in wavelength-division multiplexing (WDM) transmission systems. Gain flatness with a 3 dB gain discrepancy is obtained through manipulation of the pump power. (C) 2001 John Wiley & Sons, Inc. John Wiley & Sons 2001 Article PeerReviewed Adikan, Faisal Rafiq Mahamd and Mahdi, M.A. and Thirumeni, S. and Poopalan, Prabakaran and Dimyati, Kaharudin and Ahmad, Harith (2001) Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth. Microwave and Optical Technology Letters, 28 (6). pp. 399-402. ISSN 0895-2477 https://doi.org/10.1002/1098-2760(20010320)28:6<399::AID-MOP1053>3.0.CO;2-S
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Adikan, Faisal Rafiq Mahamd
Mahdi, M.A.
Thirumeni, S.
Poopalan, Prabakaran
Dimyati, Kaharudin
Ahmad, Harith
Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth
description A simple gain-flattened L-band erbium-doped fiber amplifier (EDFA) is demonstrated, utilizing unwanted C-band amplified spontaneous emission (ASE) to enhance L-bulld gain performance. An L-band flat gain range of 50 nm (1560-1610 nm) is achieved for use in wavelength-division multiplexing (WDM) transmission systems. Gain flatness with a 3 dB gain discrepancy is obtained through manipulation of the pump power. (C) 2001 John Wiley & Sons, Inc.
format Article
author Adikan, Faisal Rafiq Mahamd
Mahdi, M.A.
Thirumeni, S.
Poopalan, Prabakaran
Dimyati, Kaharudin
Ahmad, Harith
author_facet Adikan, Faisal Rafiq Mahamd
Mahdi, M.A.
Thirumeni, S.
Poopalan, Prabakaran
Dimyati, Kaharudin
Ahmad, Harith
author_sort Adikan, Faisal Rafiq Mahamd
title Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth
title_short Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth
title_full Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth
title_fullStr Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth
title_full_unstemmed Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth
title_sort novel, gain-flattened l-band edfa with ase utilization with > 40 nm 3 db bandwidth
publisher John Wiley & Sons
publishDate 2001
url http://eprints.um.edu.my/4710/
https://doi.org/10.1002/1098-2760(20010320)28:6<399::AID-MOP1053>3.0.CO;2-S
_version_ 1643687401545007104
score 13.154949

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