Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth

• Main Authors: Adikan, Faisal Rafiq Mahamd, Mahdi, M.A., Thirumeni, S., Poopalan, Prabakaran, Dimyati, Kaharudin, Ahmad, Harith
• Format: Article
• Published: John Wiley & Sons 2001
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.um.edu.my/4710/; https://doi.org/10.1002/1098-2760(20010320)28:6<399::AID-MOP1053>3.0.CO;2-S

A simple gain-flattened L-band erbium-doped fiber amplifier (EDFA) is demonstrated, utilizing unwanted C-band amplified spontaneous emission (ASE) to enhance L-bulld gain performance. An L-band flat gain range of 50 nm (1560-1610 nm) is achieved for use in wavelength-division multiplexing (WDM) tran...