Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride (100) thin film growth using ceramic target

• Main Authors: Abd Samad, Muhammad Izzuddin, Badrudin, Syazwani Izrah, Ponnuthurai, Darven Raj, Mansor, Marwan, Nayan, Nafarizal, Abu Bakar, Ahmad Shuhaimi, Latif, Rhonira
• Format: Article
• Published: Elsevier 2024
• Subjects: QC Physics; TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.um.edu.my/45655/; https://doi.org/10.1016/j.jmrt.2024.01.286

Aluminium nitride (AlN) can be sputter-deposited onto a substrate to form polycrystalline or single crystal AlN thin film layer. Highly crystalline AlN in (100) orientation has found its application in high-frequency acoustic wave resonators. The research work to investigate AlN (100) crystal growth...