Deriving the absorption coefficients of lattice mismatched InGaAs using genetic algorithm

Lattice-mismatched InGaAs has appeared to be emerging semiconductor materials for sensors and photovoltaic applications. The absorption coefficients of the materials are crucial in designing high-performance semi-conductor devices. Nevertheless, the absorption coefficient of lattice-mismatched InGaA...

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Bibliographic Details
Main Authors: Lee, Hui Jing, Gamel, Mansur Mohammed Ali, Ker, Pin Jern, Jamaludin, Md Zaini, Wong, Yew Hoong, Yap, Keem Siah, Willmott, Jon R., Hobbs, Matthew J., David, John. P. R., Tan, Chee Hing
Format: Article
Published: Elsevier 2023
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Online Access:http://eprints.um.edu.my/39420/
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