Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study

• Main Authors: Yeoh, Keat Hoe, Chew, Khian-Hooi, Yoon, Tiem Leong, Ong, Duu Sheng, Rusi, -
• Format: Conference or Workshop Item
• Published: 2021
• Subjects: QC Physics
• Online Access: http://eprints.um.edu.my/35425/

Ab initio calculations within the density-functional theory (DFT) are carried out to investigate the electronics and magnetic properties of the p-block elements doped two-dimensional GaN (2D GaN). We have selected Al, Si, P and S dopants as the representative for Group III, IV, V and VI elements, re...