APA引文

Yeoh, K. H. (2021). Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study.

Chicago Style Citation

Yeoh, Keat Hoe. Electronics and Magnetic Properties of P-block Elements Doped 2D Buckled Gallium Nitride MGaN (M = Al, Si, P and S): A First-principles Study. 2021.

MLA引文

Yeoh, Keat Hoe. Electronics and Magnetic Properties of P-block Elements Doped 2D Buckled Gallium Nitride MGaN (M = Al, Si, P and S): A First-principles Study. 2021.

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