Deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices
In this work, we systematically studied the deposition, characterization, and crystal structure modeling of ScAlN thin film. Measurements of the piezoelectric device's relevant material properties, such as crystal structure, crystallographic orientation, and piezoelectric response, were perform...
Saved in:
Main Authors: | , , , , , , , , , |
---|---|
Format: | Article |
Published: |
MDPI
2021
|
Subjects: | |
Online Access: | http://eprints.um.edu.my/34408/ |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
id |
my.um.eprints.34408 |
---|---|
record_format |
eprints |
spelling |
my.um.eprints.344082022-06-09T02:25:37Z http://eprints.um.edu.my/34408/ Deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices Zhang, Qiaozhen Chen, Mingzhu Liu, Huiling Zhao, Xiangyong Qin, Xiaomei Wang, Feifei Tang, Yanxue Yeoh, Keat Hoe Chew, Khian-Hooi Sun, Xiaojuan QC Physics QD Chemistry TA Engineering (General). Civil engineering (General) TN Mining engineering. Metallurgy In this work, we systematically studied the deposition, characterization, and crystal structure modeling of ScAlN thin film. Measurements of the piezoelectric device's relevant material properties, such as crystal structure, crystallographic orientation, and piezoelectric response, were performed to characterize the Sc0.29Al0.71N thin film grown using pulsed DC magnetron sputtering. Crystal structure modeling of the ScAlN thin film is proposed and validated, and the structure-property relations are discussed. The investigation results indicated that the sputtered thin film using seed layer technique had a good crystalline quality and a clear grain boundary. In addition, the effective piezoelectric coefficient d(33) was up to 12.6 pC/N, and there was no wurtzite-to-rocksalt phase transition under high pressure. These good features demonstrated that the sputtered ScAlN is promising for application in high-coupling piezoelectric devices with high-pressure stability. MDPI 2021-11 Article PeerReviewed Zhang, Qiaozhen and Chen, Mingzhu and Liu, Huiling and Zhao, Xiangyong and Qin, Xiaomei and Wang, Feifei and Tang, Yanxue and Yeoh, Keat Hoe and Chew, Khian-Hooi and Sun, Xiaojuan (2021) Deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices. Materials, 14 (21). ISSN EISSN 1996-1944, DOI https://doi.org/10.3390/ma14216437 <https://doi.org/10.3390/ma14216437>. 10.3390/ma14216437 |
institution |
Universiti Malaya |
building |
UM Library |
collection |
Institutional Repository |
continent |
Asia |
country |
Malaysia |
content_provider |
Universiti Malaya |
content_source |
UM Research Repository |
url_provider |
http://eprints.um.edu.my/ |
topic |
QC Physics QD Chemistry TA Engineering (General). Civil engineering (General) TN Mining engineering. Metallurgy |
spellingShingle |
QC Physics QD Chemistry TA Engineering (General). Civil engineering (General) TN Mining engineering. Metallurgy Zhang, Qiaozhen Chen, Mingzhu Liu, Huiling Zhao, Xiangyong Qin, Xiaomei Wang, Feifei Tang, Yanxue Yeoh, Keat Hoe Chew, Khian-Hooi Sun, Xiaojuan Deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices |
description |
In this work, we systematically studied the deposition, characterization, and crystal structure modeling of ScAlN thin film. Measurements of the piezoelectric device's relevant material properties, such as crystal structure, crystallographic orientation, and piezoelectric response, were performed to characterize the Sc0.29Al0.71N thin film grown using pulsed DC magnetron sputtering. Crystal structure modeling of the ScAlN thin film is proposed and validated, and the structure-property relations are discussed. The investigation results indicated that the sputtered thin film using seed layer technique had a good crystalline quality and a clear grain boundary. In addition, the effective piezoelectric coefficient d(33) was up to 12.6 pC/N, and there was no wurtzite-to-rocksalt phase transition under high pressure. These good features demonstrated that the sputtered ScAlN is promising for application in high-coupling piezoelectric devices with high-pressure stability. |
format |
Article |
author |
Zhang, Qiaozhen Chen, Mingzhu Liu, Huiling Zhao, Xiangyong Qin, Xiaomei Wang, Feifei Tang, Yanxue Yeoh, Keat Hoe Chew, Khian-Hooi Sun, Xiaojuan |
author_facet |
Zhang, Qiaozhen Chen, Mingzhu Liu, Huiling Zhao, Xiangyong Qin, Xiaomei Wang, Feifei Tang, Yanxue Yeoh, Keat Hoe Chew, Khian-Hooi Sun, Xiaojuan |
author_sort |
Zhang, Qiaozhen |
title |
Deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices |
title_short |
Deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices |
title_full |
Deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices |
title_fullStr |
Deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices |
title_full_unstemmed |
Deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices |
title_sort |
deposition, characterization, and modeling of scandium-doped aluminum nitride thin film for piezoelectric devices |
publisher |
MDPI |
publishDate |
2021 |
url |
http://eprints.um.edu.my/34408/ |
_version_ |
1735570304669843456 |
score |
13.209306 |