Enhancement of electrical performance of Ge-based metal-oxide-semiconductor capacitor via formation of trigonal-Sm2O3

• Main Authors: Onik, Tahsin Ahmed Mozaffor, Hawari, Huzein Fahmi, Mohd Faizul, Mohd Sabri, Wong, Yew Hoong
• Format: Article
• Published: 2021
• Subjects: QC Physics; QD Chemistry
• Online Access: http://eprints.um.edu.my/26290/; https://doi.org/10.1016/j.surfin.2021.101289

In this study, Sm2O3/Ge stack based capacitor prepared from thermally oxidized/nitrided sputtered metallic Sm on Ge semiconductor in N2O ambient for several oxidation/nitridation durations, i.e., 5 - 20 min have been comprehensively investigated. The film crystallinity, chemical composition and inte...