Surface and interface characteristics of annealed ZrO2/Ge oxide-semiconductor structure in argon ambient
ZrO2 thin film of 5 nm has been thermally oxidized from metallic Zr on Ge in oxygen ambient at 500°C for 15 min. The effects of post-oxidation annealing temperature (400°C–800°C) on the surface and interface characteristics of the ZrO2 thin films on Ge semiconductor wafer substrate have been systema...
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| Main Authors: | , , |
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| Format: | Article |
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Elsevier
2021
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| Online Access: | http://eprints.um.edu.my/25926/ https://doi.org/10.1016/j.surfin.2021.101007 |
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| Summary: | ZrO2 thin film of 5 nm has been thermally oxidized from metallic Zr on Ge in oxygen ambient at 500°C for 15 min. The effects of post-oxidation annealing temperature (400°C–800°C) on the surface and interface characteristics of the ZrO2 thin films on Ge semiconductor wafer substrate have been systematically investigated. Chemical and structural properties of the films were characterized by X-ray diffractometer system, X-ray photoelectron spectrometer, Raman spectrometer, and optical microscopy. Metal-oxide-semiconductor capacitors have been constructed to test the leakage current through the oxide film by current–voltage measurements. The optimal annealing temperature for ZrO2/Ge structure is reported to be at 600°C. With the analysis of the characterized results, the surface and interface characteristics of annealed ZrO2/Ge structure has with a post oxidation annealing mechanism has been suggested. © 2021 Elsevier B.V. |
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