A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer With Integrated Transformer-Based Gate Inductor and IM2 Injection Technique
This article proposes two linearization techniques in improving the third-order input intercept point (IIP3) of a balun-low-noise amplifier (LNA) mixer. First, the intrinsic third-order intermodulation (IM3) product of the inductively source degenerated (ISD) transconductor from the second-order der...
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my.um.eprints.247782020-06-11T00:16:57Z http://eprints.um.edu.my/24778/ A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer With Integrated Transformer-Based Gate Inductor and IM2 Injection Technique Vitee, Nandini Ramiah, Harikrishnan Mak, Pui-In Yin, Jun Martins, Rui Paulo TK Electrical engineering. Electronics Nuclear engineering This article proposes two linearization techniques in improving the third-order input intercept point (IIP3) of a balun-low-noise amplifier (LNA) mixer. First, the intrinsic third-order intermodulation (IM3) product of the inductively source degenerated (ISD) transconductor from the second-order derivative transconductance component ({g}''m) is reduced by tailoring toward the optimum biasing point at the moderate-inversion region. Second, the generated IM3 current by the first-order derivative transconductance ({g}'m) due to the interaction with the feedback component in the ISD transconductor is attenuated by second-harmonic injection via the bulk of the ISD transconductor. Furthermore, a transformer-based gate inductor and a transformer-based balun are applied to improve the input impedance matching and produce a balanced differential input signal. Measured results in 0.13- μ m CMOS show a high IIP3 of +16 dBm and a conversion gain (CG) of 22 dB at 2.4 GHz. The double-sideband (DSB) noise figure (NF) is 7.2 dB, and the power consumption is 3.15 mW at 1.2 V. © 1993-2012 IEEE. Institute of Electrical and Electronics Engineers 2020 Article PeerReviewed Vitee, Nandini and Ramiah, Harikrishnan and Mak, Pui-In and Yin, Jun and Martins, Rui Paulo (2020) A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer With Integrated Transformer-Based Gate Inductor and IM2 Injection Technique. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 28 (3). pp. 700-713. ISSN 1063-8210 https://doi.org/10.1109/TVLSI.2019.2950961 doi:10.1109/TVLSI.2019.2950961 |
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TK Electrical engineering. Electronics Nuclear engineering Vitee, Nandini Ramiah, Harikrishnan Mak, Pui-In Yin, Jun Martins, Rui Paulo A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer With Integrated Transformer-Based Gate Inductor and IM2 Injection Technique |
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This article proposes two linearization techniques in improving the third-order input intercept point (IIP3) of a balun-low-noise amplifier (LNA) mixer. First, the intrinsic third-order intermodulation (IM3) product of the inductively source degenerated (ISD) transconductor from the second-order derivative transconductance component ({g}''m) is reduced by tailoring toward the optimum biasing point at the moderate-inversion region. Second, the generated IM3 current by the first-order derivative transconductance ({g}'m) due to the interaction with the feedback component in the ISD transconductor is attenuated by second-harmonic injection via the bulk of the ISD transconductor. Furthermore, a transformer-based gate inductor and a transformer-based balun are applied to improve the input impedance matching and produce a balanced differential input signal. Measured results in 0.13- μ m CMOS show a high IIP3 of +16 dBm and a conversion gain (CG) of 22 dB at 2.4 GHz. The double-sideband (DSB) noise figure (NF) is 7.2 dB, and the power consumption is 3.15 mW at 1.2 V. © 1993-2012 IEEE. |
format |
Article |
author |
Vitee, Nandini Ramiah, Harikrishnan Mak, Pui-In Yin, Jun Martins, Rui Paulo |
author_facet |
Vitee, Nandini Ramiah, Harikrishnan Mak, Pui-In Yin, Jun Martins, Rui Paulo |
author_sort |
Vitee, Nandini |
title |
A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer With Integrated Transformer-Based Gate Inductor and IM2 Injection Technique |
title_short |
A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer With Integrated Transformer-Based Gate Inductor and IM2 Injection Technique |
title_full |
A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer With Integrated Transformer-Based Gate Inductor and IM2 Injection Technique |
title_fullStr |
A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer With Integrated Transformer-Based Gate Inductor and IM2 Injection Technique |
title_full_unstemmed |
A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer With Integrated Transformer-Based Gate Inductor and IM2 Injection Technique |
title_sort |
3.15-mw +16.0-dbm iip3 22-db cg inductively source degenerated balun-lna mixer with integrated transformer-based gate inductor and im2 injection technique |
publisher |
Institute of Electrical and Electronics Engineers |
publishDate |
2020 |
url |
http://eprints.um.edu.my/24778/ https://doi.org/10.1109/TVLSI.2019.2950961 |
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1674066727417151488 |
score |
13.160551 |