405 nm ultraviolet photodetector based on tungsten disulphide thin film grown by drop casting method

In this work, a tungsten disulphide or WS2 based heterojunction photodetector device is fabricated on top of Si substrate by simple drop casting. Raman shifts are observed at 350.16 and 419.36 cm−1, confirming the successful growth of the WS2 and the non-stoichiometric WS2 layers which are verified...

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Bibliographic Details
Main Authors: Ahmad, Harith, Rashid, Haroon
Format: Article
Published: Taylor & Francis 2019
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Online Access:http://eprints.um.edu.my/24324/
https://doi.org/10.1080/09500340.2019.1682207
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