Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current

Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermedi...

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Main Authors: Mohd Sarjidan, Mohd Arif, Shuhaimi, Ahmad, Abd Majid, Wan Haliza
Format: Article
Published: Elsevier 2018
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Online Access:http://eprints.um.edu.my/21233/
https://doi.org/10.1016/j.cap.2018.08.007
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spelling my.um.eprints.212332019-05-15T06:40:12Z http://eprints.um.edu.my/21233/ Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current Mohd Sarjidan, Mohd Arif Shuhaimi, Ahmad Abd Majid, Wan Haliza Q Science (General) QC Physics Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density >280 mA/cm2 at Vd = 5 V. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application. Elsevier 2018 Article PeerReviewed Mohd Sarjidan, Mohd Arif and Shuhaimi, Ahmad and Abd Majid, Wan Haliza (2018) Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current. Current Applied Physics, 18 (11). pp. 1415-1421. ISSN 1567-1739 https://doi.org/10.1016/j.cap.2018.08.007 doi:10.1016/j.cap.2018.08.007
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic Q Science (General)
QC Physics
spellingShingle Q Science (General)
QC Physics
Mohd Sarjidan, Mohd Arif
Shuhaimi, Ahmad
Abd Majid, Wan Haliza
Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current
description Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density >280 mA/cm2 at Vd = 5 V. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application.
format Article
author Mohd Sarjidan, Mohd Arif
Shuhaimi, Ahmad
Abd Majid, Wan Haliza
author_facet Mohd Sarjidan, Mohd Arif
Shuhaimi, Ahmad
Abd Majid, Wan Haliza
author_sort Mohd Sarjidan, Mohd Arif
title Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current
title_short Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current
title_full Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current
title_fullStr Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current
title_full_unstemmed Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current
title_sort observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (vofets) with high leakage current
publisher Elsevier
publishDate 2018
url http://eprints.um.edu.my/21233/
https://doi.org/10.1016/j.cap.2018.08.007
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score 13.160551