Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current
Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermedi...
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| Main Authors: | , , |
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| Format: | Article |
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Elsevier
2018
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/21233/ https://doi.org/10.1016/j.cap.2018.08.007 |
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| Summary: | Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density >280 mA/cm2 at Vd = 5 V. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application. |
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