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Temperature dependence of raman scattering in 4H-SiC films under different growth conditions

The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80K to 550 K. The effects of growth conditions on E-2(TO), E-1(TO) and A(1)(LO) phonon mode frequencies are negligible. The...

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Main Authors: Wang, H.C., He, Y.T., Sun, H.Y., Qiu, Z.R., Xie, D., Mei, T., Tin, C.C., Feng, Z.C.
Format: Article
Language:English
Published: Iop Publishing Ltd, Temple Circus, Temple Way, Bristol Bs1 6be, England 2015
Subjects:
T Technology (General)
TJ Mechanical engineering and machinery
Online Access:http://eprints.um.edu.my/13808/1/Temperature_Dependence_of_Raman_Scattering_in_4H-SiC_Films.pdf
http://eprints.um.edu.my/13808/
http://iopscience.iop.org/0256-307X/32/4/047801/pdf/0256-307X_32_4_047801.pdf
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spelling my.um.eprints.138082015-07-25T02:19:28Z http://eprints.um.edu.my/13808/ Temperature dependence of raman scattering in 4H-SiC films under different growth conditions Wang, H.C. He, Y.T. Sun, H.Y. Qiu, Z.R. Xie, D. Mei, T. Tin, C.C. Feng, Z.C. T Technology (General) TJ Mechanical engineering and machinery The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80K to 550 K. The effects of growth conditions on E-2(TO), E-1(TO) and A(1)(LO) phonon mode frequencies are negligible. The temperature dependences of phonon linewidth and lifetime of E2(TO) modes are analyzed in terms of an anharmonic damping effect induced by thermal and growth conditions. The results show that the lifetime of E-2(TO) mode increases when the quality of the sample improves. Unlike other phone modes, Raman shift of A(1) (longitudinal optical plasma coupling (LOPC)) mode does not decrease monotonously when the temperature increases, but tends to blueshift at low temperatures and to redshift at relatively high temperatures. Theoretical analyses are given for the abnormal phenomena of A(1)(LOPC) mode in 4H-SiC. Iop Publishing Ltd, Temple Circus, Temple Way, Bristol Bs1 6be, England 2015-04 Article PeerReviewed application/pdf en http://eprints.um.edu.my/13808/1/Temperature_Dependence_of_Raman_Scattering_in_4H-SiC_Films.pdf Wang, H.C. and He, Y.T. and Sun, H.Y. and Qiu, Z.R. and Xie, D. and Mei, T. and Tin, C.C. and Feng, Z.C. (2015) Temperature dependence of raman scattering in 4H-SiC films under different growth conditions. Chinese Physics Letters, 32 (4). p. 5. ISSN 0256-307X http://iopscience.iop.org/0256-307X/32/4/047801/pdf/0256-307X_32_4_047801.pdf 10.1088/0256-307x/32/4/047801
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
language English
topic T Technology (General)
TJ Mechanical engineering and machinery
spellingShingle T Technology (General)
TJ Mechanical engineering and machinery
Wang, H.C.
He, Y.T.
Sun, H.Y.
Qiu, Z.R.
Xie, D.
Mei, T.
Tin, C.C.
Feng, Z.C.
Temperature dependence of raman scattering in 4H-SiC films under different growth conditions
description The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80K to 550 K. The effects of growth conditions on E-2(TO), E-1(TO) and A(1)(LO) phonon mode frequencies are negligible. The temperature dependences of phonon linewidth and lifetime of E2(TO) modes are analyzed in terms of an anharmonic damping effect induced by thermal and growth conditions. The results show that the lifetime of E-2(TO) mode increases when the quality of the sample improves. Unlike other phone modes, Raman shift of A(1) (longitudinal optical plasma coupling (LOPC)) mode does not decrease monotonously when the temperature increases, but tends to blueshift at low temperatures and to redshift at relatively high temperatures. Theoretical analyses are given for the abnormal phenomena of A(1)(LOPC) mode in 4H-SiC.
format Article
author Wang, H.C.
He, Y.T.
Sun, H.Y.
Qiu, Z.R.
Xie, D.
Mei, T.
Tin, C.C.
Feng, Z.C.
author_facet Wang, H.C.
He, Y.T.
Sun, H.Y.
Qiu, Z.R.
Xie, D.
Mei, T.
Tin, C.C.
Feng, Z.C.
author_sort Wang, H.C.
title Temperature dependence of raman scattering in 4H-SiC films under different growth conditions
title_short Temperature dependence of raman scattering in 4H-SiC films under different growth conditions
title_full Temperature dependence of raman scattering in 4H-SiC films under different growth conditions
title_fullStr Temperature dependence of raman scattering in 4H-SiC films under different growth conditions
title_full_unstemmed Temperature dependence of raman scattering in 4H-SiC films under different growth conditions
title_sort temperature dependence of raman scattering in 4h-sic films under different growth conditions
publisher Iop Publishing Ltd, Temple Circus, Temple Way, Bristol Bs1 6be, England
publishDate 2015
url http://eprints.um.edu.my/13808/1/Temperature_Dependence_of_Raman_Scattering_in_4H-SiC_Films.pdf
http://eprints.um.edu.my/13808/
http://iopscience.iop.org/0256-307X/32/4/047801/pdf/0256-307X_32_4_047801.pdf
_version_ 1643689655107846144
score 13.211869

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