Temperature dependence of raman scattering in 4H-SiC films under different growth conditions

• Main Authors: Wang, H.C., He, Y.T., Sun, H.Y., Qiu, Z.R., Xie, D., Mei, T., Tin, C.C., Feng, Z.C.
• Format: Article
• Language: English
• Published: Iop Publishing Ltd, Temple Circus, Temple Way, Bristol Bs1 6be, England 2015
• Subjects: T Technology (General); TJ Mechanical engineering and machinery
• Online Access: http://eprints.um.edu.my/13808/1/Temperature_Dependence_of_Raman_Scattering_in_4H-SiC_Films.pdf; http://eprints.um.edu.my/13808/; http://iopscience.iop.org/0256-307X/32/4/047801/pdf/0256-307X_32_4_047801.pdf

The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80K to 550 K. The effects of growth conditions on E-2(TO), E-1(TO) and A(1)(LO) phonon mode frequencies are negligible. The...