Microstructural and optical properties of ZrON/Si thin films
ZrON/Si(100) layer structure formation has been produced by oxidation/nitridation of sputtered Zr metal in N2O/Ar ambient at 500–900 °C. Micromorphology and structural properties of the films have been evaluated by scanning electron microscopy, atomic force microscopy, and reflection high-energy ele...
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2013
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my.um.eprints.130062015-03-11T03:59:25Z http://eprints.um.edu.my/13006/ Microstructural and optical properties of ZrON/Si thin films Atuchin, V.V. Kruchinin, V.N. Wong, Y.H. Cheong, K.Y. TA Engineering (General). Civil engineering (General) ZrON/Si(100) layer structure formation has been produced by oxidation/nitridation of sputtered Zr metal in N2O/Ar ambient at 500–900 °C. Micromorphology and structural properties of the films have been evaluated by scanning electron microscopy, atomic force microscopy, and reflection high-energy electron diffraction. Dispersive optical properties of the ZrON/Si reflection system have been studied with spectroscopic ellipsometry. A drastic increase of SiO2-based interface layer thickness has been found at 700–900 °C. Elsevier 2013-08-15 Article PeerReviewed Atuchin, V.V. and Kruchinin, V.N. and Wong, Y.H. and Cheong, K.Y. (2013) Microstructural and optical properties of ZrON/Si thin films. Materials Letters, 105. pp. 72-75. ISSN 0167-577X http://www.sciencedirect.com/science/article/pii/S0167577X13004291 http://dx.doi.org/10.1016/j.matlet.2013.03.100 |
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TA Engineering (General). Civil engineering (General) Atuchin, V.V. Kruchinin, V.N. Wong, Y.H. Cheong, K.Y. Microstructural and optical properties of ZrON/Si thin films |
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ZrON/Si(100) layer structure formation has been produced by oxidation/nitridation of sputtered Zr metal in N2O/Ar ambient at 500–900 °C. Micromorphology and structural properties of the films have been evaluated by scanning electron microscopy, atomic force microscopy, and reflection high-energy electron diffraction. Dispersive optical properties of the ZrON/Si reflection system have been studied with spectroscopic ellipsometry. A drastic increase of SiO2-based interface layer thickness has been found at 700–900 °C. |
| format |
Article |
| author |
Atuchin, V.V. Kruchinin, V.N. Wong, Y.H. Cheong, K.Y. |
| author_facet |
Atuchin, V.V. Kruchinin, V.N. Wong, Y.H. Cheong, K.Y. |
| author_sort |
Atuchin, V.V. |
| title |
Microstructural and optical properties of ZrON/Si thin films |
| title_short |
Microstructural and optical properties of ZrON/Si thin films |
| title_full |
Microstructural and optical properties of ZrON/Si thin films |
| title_fullStr |
Microstructural and optical properties of ZrON/Si thin films |
| title_full_unstemmed |
Microstructural and optical properties of ZrON/Si thin films |
| title_sort |
microstructural and optical properties of zron/si thin films |
| publisher |
Elsevier |
| publishDate |
2013 |
| url |
http://eprints.um.edu.my/13006/ http://www.sciencedirect.com/science/article/pii/S0167577X13004291 http://dx.doi.org/10.1016/j.matlet.2013.03.100 |
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13.209306 |