Gas sensitive al membarane on n-type gan schottky diode / A. Y Hudeish, A. Abdul Aziz and Z. Hassan

In this work, we have studied and fabricated a new, simple and small-size N2 and H2 sensitive Aluminum (AI) membrane/semiconductor (Al/n-GaN) Schottky diode sensor. Experimental results revealed that, during the hydride or nitride formation process, the time response increased and enhanced with temp...

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Bibliographic Details
Main Authors: Hudeish, A. Y., Abdul Aziz, A., Hassan, Z.
Format: Conference or Workshop Item
Language:English
Published: 2004
Subjects:
Online Access:https://ir.uitm.edu.my/id/eprint/50515/1/50515.PDF
https://ir.uitm.edu.my/id/eprint/50515/
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