Gas sensitive al membarane on n-type gan schottky diode / A. Y Hudeish, A. Abdul Aziz and Z. Hassan
In this work, we have studied and fabricated a new, simple and small-size N2 and H2 sensitive Aluminum (AI) membrane/semiconductor (Al/n-GaN) Schottky diode sensor. Experimental results revealed that, during the hydride or nitride formation process, the time response increased and enhanced with temp...
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Main Authors: | , , |
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Format: | Conference or Workshop Item |
Language: | English |
Published: |
2004
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Subjects: | |
Online Access: | https://ir.uitm.edu.my/id/eprint/50515/1/50515.PDF https://ir.uitm.edu.my/id/eprint/50515/ |
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