Investigation of insulator oxidation type and thickness on the capacitor electrical characteristic / Mohd Nashriq Shauket Mohd Nasir
MOS capacitors with Si02 and various thickness of insulator (dielectric) layer were fabricated and characterized. Si02 films were physical characterized by F20 Thin Film Analyzer, Four Point Probe. Capacitance-voltage measurements were utilized to obtain, the effective dielectric constant, effective...
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| Format: | Student Project |
| Language: | English |
| Published: |
2010
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| Online Access: | http://ir.uitm.edu.my/id/eprint/48455/1/48455.pdf http://ir.uitm.edu.my/id/eprint/48455/ |
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