Effect of annealing temperature and time on boron and phosphorus spin-on dopant in n-type silicon wafer / Nor Aisyah Jamaluddin
In this study, N-type silicon wafer is doped with Boron dopant and Phosphorus dopant. Both of doping process is using spin-on dopant. The effect of annealing temperature and time is studied between Boron-doped silicon wafer with Phosphorus-doped silicon wafer. The annealing time will be fixed at 60...
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| Format: | Student Project |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/44551/1/44551.pdf https://ir.uitm.edu.my/id/eprint/44551/ |
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