Investigation of doping techniques on the silicon based capacitor / Ahmad Akmalhakim Yaacob

This paper investigates the effect of doping techniques, type of dopant species and plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers were highly doped using either solid source (SS) or spin-on dopant (SOD) method. The wafers were doped according...

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Main Author: Yaacob, Ahmad Akmalhakim
Format: Thesis
Language:English
Published: 2010
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Online Access:https://ir.uitm.edu.my/id/eprint/102958/1/102958.pdf
https://ir.uitm.edu.my/id/eprint/102958/
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spelling my.uitm.ir.1029582024-09-30T08:26:46Z https://ir.uitm.edu.my/id/eprint/102958/ Investigation of doping techniques on the silicon based capacitor / Ahmad Akmalhakim Yaacob Yaacob, Ahmad Akmalhakim Applications of electric power This paper investigates the effect of doping techniques, type of dopant species and plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers were highly doped using either solid source (SS) or spin-on dopant (SOD) method. The wafers were doped according to their types where the n-type wafers were doped with phosphorus where as the p-type wafers were doped with boron. Three different diffusion temperatures were used in this experiment which are 900oC, 1000oC and 1050oC. The diffusion process was conducted by using the ModuLab diffusion furnace. The low-frequency CV measurement using the Keithley 595 Quasistatic CV meter was conducted in order to study the capacitance value in this research. Results show that the diffusion by spin-on dopant gives a higher capacitance density compared to diffusion by solid source and larger plate size would contribute to a larger capacitance value. In addition, the experiment also shows that n-type wafer heavily doped with phosphorus exhibits a higher capacitance density. 2010 Thesis NonPeerReviewed text en https://ir.uitm.edu.my/id/eprint/102958/1/102958.pdf Investigation of doping techniques on the silicon based capacitor / Ahmad Akmalhakim Yaacob. (2010) Degree thesis, thesis, Universiti Teknologi MARA (UiTM). <http://terminalib.uitm.edu.my/102958.pdf>
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic Applications of electric power
spellingShingle Applications of electric power
Yaacob, Ahmad Akmalhakim
Investigation of doping techniques on the silicon based capacitor / Ahmad Akmalhakim Yaacob
description This paper investigates the effect of doping techniques, type of dopant species and plate size on the capacitance density of a silicon based capacitor. The substrate of the silicon wafers were highly doped using either solid source (SS) or spin-on dopant (SOD) method. The wafers were doped according to their types where the n-type wafers were doped with phosphorus where as the p-type wafers were doped with boron. Three different diffusion temperatures were used in this experiment which are 900oC, 1000oC and 1050oC. The diffusion process was conducted by using the ModuLab diffusion furnace. The low-frequency CV measurement using the Keithley 595 Quasistatic CV meter was conducted in order to study the capacitance value in this research. Results show that the diffusion by spin-on dopant gives a higher capacitance density compared to diffusion by solid source and larger plate size would contribute to a larger capacitance value. In addition, the experiment also shows that n-type wafer heavily doped with phosphorus exhibits a higher capacitance density.
format Thesis
author Yaacob, Ahmad Akmalhakim
author_facet Yaacob, Ahmad Akmalhakim
author_sort Yaacob, Ahmad Akmalhakim
title Investigation of doping techniques on the silicon based capacitor / Ahmad Akmalhakim Yaacob
title_short Investigation of doping techniques on the silicon based capacitor / Ahmad Akmalhakim Yaacob
title_full Investigation of doping techniques on the silicon based capacitor / Ahmad Akmalhakim Yaacob
title_fullStr Investigation of doping techniques on the silicon based capacitor / Ahmad Akmalhakim Yaacob
title_full_unstemmed Investigation of doping techniques on the silicon based capacitor / Ahmad Akmalhakim Yaacob
title_sort investigation of doping techniques on the silicon based capacitor / ahmad akmalhakim yaacob
publishDate 2010
url https://ir.uitm.edu.my/id/eprint/102958/1/102958.pdf
https://ir.uitm.edu.my/id/eprint/102958/
_version_ 1811690143345541120
score 13.211869