Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition

• المؤلفون الرئيسيون: Sirat, Mohamad Shukri, Johari, Muhammad Hilmi, Mohmad, Abdul Rahman, Mohammad Haniff, Muhammad Aniq Shazni, Ani, Mohd Hanafi, Syono, Mohd Ismahadi, Mohamed, Mohd Ambri
• التنسيق: مقال
• اللغة: English; English
• منشور في: Elsevier 2022
• الموضوعات: T Technology (General); TA401 Materials of engineering and construction
• الوصول للمادة أونلاين: http://irep.iium.edu.my/97769/1/97769_Uniform%20growth%20of%20MoS2%20films_SCOPUS.pdf; http://irep.iium.edu.my/97769/7/97769_Uniform%20growth%20of%20MoS2%20films.pdf; http://irep.iium.edu.my/97769/; https://www.journals.elsevier.com/thin-solid-films

In chemical vapor deposition (CVD), homogeneous molybdenum vapor concentration is important in synthe- sizing uniform thickness and large coverage of two-dimensional molybdenum disulfide (2D-MoS2) films. Here, we synthesize few-layer MoS2 films with uniform thickness and adequate coverage over 50 mm...