Measuring the electronic properties of poly-si thin film solar cells deposited on textured substrate

• Main Authors: Muhida, Riza, Sutjipto, Agus Geter Edy, Matsui, T., Toyama, T., Okamoto, H.
• Format: Conference or Workshop Item
• Language: English
• Published: 2006
• Subjects: TK452 Electric apparatus and materials. Electric circuits. Electric networks
• Online Access: http://irep.iium.edu.my/9439/1/Poly_Si_-_IEEE_2006.pdf; http://irep.iium.edu.my/9439/

Electrical properties of PECVD produced poly-Si photovoltaic layers on the various textured substrates showing the light trapping effect have been investigated using an AC-conductivity technique. From temperature dependence of electron (hole) conductivities using n-i-n (p-i-p) structures, the Fermi level of the poly-Si layer on the slightly textured substrates is found to locate at the center of the band gap and this material is 'truly' intrinsic. As RMS roughness of the textured substrate, q increases, the Fermi level becomes close to conduction band edge, and finally, the poly-Si layer on the highly textured substrate exhibits n-type character even though any deposition conditions for the poly-Si layers are not changed at all. Changes in electrical conductivities of the poly-Si thin films in conjunction with the results on photovoltaic performances and microstructure are also discussed.