Measuring the electronic properties of poly-si thin film solar cells deposited on textured substrate
Electrical properties of PECVD produced poly-Si photovoltaic layers on the various textured substrates showing the light trapping effect have been investigated using an AC-conductivity technique. From temperature dependence of electron (hole) conductivities using n-i-n (p-i-p) structures, the Fermi...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2006
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/9439/1/Poly_Si_-_IEEE_2006.pdf http://irep.iium.edu.my/9439/ |
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| Summary: | Electrical properties of PECVD produced poly-Si photovoltaic layers on the various textured substrates showing the light trapping effect have been investigated using an AC-conductivity technique. From temperature dependence of electron (hole) conductivities using n-i-n (p-i-p) structures, the Fermi level of the poly-Si layer on the slightly textured substrates is found to locate at the
center of the band gap and this material is 'truly' intrinsic. As RMS roughness of the textured substrate, q increases, the Fermi level becomes close to conduction band edge, and finally, the poly-Si layer on the highly textured
substrate exhibits n-type character even though any deposition conditions for the poly-Si layers are not changed at all. Changes in electrical conductivities of the poly-Si thin films in conjunction with the results on photovoltaic performances and microstructure are also discussed. |
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