The radiation effect on low noise amplifier implemented in the space-aerial–terrestrial integrated 5G networks

This paper provides the details of a study on the effects of electron irradiation on two Low Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) based and the Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous stud...

Full description

Saved in:
Bibliographic Details
Main Authors: Youssouf, Abdouraouf S., Habaebi, Mohamed Hadi, Hasbullah, Nurul Fadzlin
Format: Article
Language:English
English
English
English
Published: IEEE-Inst Electrical Electronics Engineers Inc 2021
Subjects:
Online Access:http://irep.iium.edu.my/89040/13/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_article.pdf
http://irep.iium.edu.my/89040/14/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_scopus.pdf
http://irep.iium.edu.my/89040/15/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_wos.pdf
http://irep.iium.edu.my/89040/2/Acceptance%20letter.pdf
http://irep.iium.edu.my/89040/
https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=9374949
Tags: Add Tag
No Tags, Be the first to tag this record!
Be the first to leave a comment!
You must be logged in first