The radiation effect on low noise amplifier implemented in the space-aerial–terrestrial integrated 5G networks

• Main Authors: Youssouf, Abdouraouf S., Habaebi, Mohamed Hadi, Hasbullah, Nurul Fadzlin
• Format: Article
• Language: English; English; English; English
• Published: IEEE-Inst Electrical Electronics Engineers Inc 2021
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://irep.iium.edu.my/89040/13/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_article.pdf; http://irep.iium.edu.my/89040/14/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_scopus.pdf; http://irep.iium.edu.my/89040/15/89040_The%20Radiation%20Effect%20on%20Low%20Noise%20Amplifier_wos.pdf; http://irep.iium.edu.my/89040/2/Acceptance%20letter.pdf; http://irep.iium.edu.my/89040/; https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=9374949

This paper provides the details of a study on the effects of electron irradiation on two Low Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) based and the Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous stud...