Electrical behavior of Graphene/SiO2/Silicon material irradiated by electron for Field Effect Transistor (FET) applications

• Main Authors: Zamzuri, Ahmad Syahmi, Ayob, Nur Idayu, Abdullah, Yusof, Saidin, Nur Ubaidah, Che Hak, Cik Rohaida
• Format: Article
• Language: English; English
• Published: Trans Tech Publications Ltd, Switzerland 2020
• Subjects: T Technology (General); TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://irep.iium.edu.my/83169/13/83169_Electrical%20Behavior%20of%20Graphene_article.pdf; http://irep.iium.edu.my/83169/7/83169_Electrical%20behavior%20of%20Graphene-Silicon%20material%20irradiated_Scopus%20Conference.pdf; http://irep.iium.edu.my/83169/; https://www.scientific.net/MSF.1010.339

In this paper, the detail study of electrical conductivity of single layer graphene (SLG) on silicon dioxide (SiO2)/Silicon substrate irradiated by high energy (MeV) electron is presented. The SLG samples prepared by Chemical Vapor Deposition (CVD) were irradiated by 50 kGy, 100 kGy and 200 kGy dose...