Electrical behavior of Graphene/SiO2/Silicon material irradiated by electron for Field Effect Transistor (FET) applications

• Main Authors: Zamzuri, Ahmad Syahmi, Ayob, Nur Idayu, Abdullah, Yusof, Saidin, Nur Ubaidah, Che Hak, Cik Rohaida
• Format: Article
• Language: English; English
• Published: Trans Tech Publications Ltd, Switzerland 2020
• Subjects: T Technology (General); TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://irep.iium.edu.my/83169/13/83169_Electrical%20Behavior%20of%20Graphene_article.pdf; http://irep.iium.edu.my/83169/7/83169_Electrical%20behavior%20of%20Graphene-Silicon%20material%20irradiated_Scopus%20Conference.pdf; http://irep.iium.edu.my/83169/; https://www.scientific.net/MSF.1010.339

In this paper, the detail study of electrical conductivity of single layer graphene (SLG) on silicon dioxide (SiO2)/Silicon substrate irradiated by high energy (MeV) electron is presented. The SLG samples prepared by Chemical Vapor Deposition (CVD) were irradiated by 50 kGy, 100 kGy and 200 kGy doses of electron radiation at energy voltage of 3 MeV. Current-Voltage (I-V) characteristics and conductivity of the pristine and irradiated graphene samples were measured and analysed using I-V measurement at room temperature. The non-linear I-V curves were clearly observed as the voltage reach to 2.0 V for non-irradiated and irradiated samples. This may be attributed to the non-uniform charges by high energy electron irradiation and poor metal contact of the sample. Hysteresis loop form at 2.0 V probably due to the to the charge trapping occurs at the interface of the graphene and SiO2. The reaction of high energy particles lead to creation of more carrier charges that contribute to the increment of conductivity compare to the small number of atom displacement of knock-on collisions with the nuclei of carbon atoms at higher dose. This study provides significant findings on the graphene electrical characteristics when irradiated with high energy (MeV) electron.