About the silicon sensitivity of the deep level with alternating pressure

• Main Authors: Tursunov, Ikromjon Gulamovich, Okhunov, Abdurahim, Mamatkarimov, Odiljon Oxundadaevich
• Format: Article
• Language: English; English; English
• Published: IIUM Press, International Islamic University Malaysia 2018
• Subjects: QC Physics
• Online Access: http://irep.iium.edu.my/67747/1/67747_About%20the%20Silicon%20Sensitivity%20of%20the%20Deep.pdf; http://irep.iium.edu.my/67747/7/67747_About%20the%20silicon%20sensitivity_scopus.pdf; http://irep.iium.edu.my/67747/12/67747%20ABOUT%20THE%20SILICON%20SENSITIVITY%20%20WOS.pdf; http://irep.iium.edu.my/67747/; http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/794/663

This paper discusses the strain sensitivity of silicon with deep levels under variable pressure. It is shown that in the pressure swing in silicon with deep levels, there is a redistribution of the primary spatial inhomogeneities in the distribution of impurities so that the electron-hole relaxation...