Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch bet...
Saved in:
Main Authors: | , , , , |
---|---|
Format: | Conference or Workshop Item |
Language: | English English |
Published: |
Institute of Physics Publishing
2018
|
Subjects: | |
Online Access: | http://irep.iium.edu.my/65199/1/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_conference%20article.pdf http://irep.iium.edu.my/65199/2/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_scopus.pdf http://irep.iium.edu.my/65199/ http://iopscience.iop.org/article/10.1088/1757-899X/328/1/012019/pdf |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
id |
my.iium.irep.65199 |
---|---|
record_format |
dspace |
spelling |
my.iium.irep.651992018-07-26T09:25:16Z http://irep.iium.edu.my/65199/ Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment Tanasta, Z. Muhamad, Pauziah Kuwano, Noriyuki Mohd Yatim, Norfazrina Hayati Unuh, Mohd Hishamuddin TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 ℃. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem. Institute of Physics Publishing 2018-03-16 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/65199/1/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_conference%20article.pdf application/pdf en http://irep.iium.edu.my/65199/2/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_scopus.pdf Tanasta, Z. and Muhamad, Pauziah and Kuwano, Noriyuki and Mohd Yatim, Norfazrina Hayati and Unuh, Mohd Hishamuddin (2018) Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment. In: 3rd International Conference on Mechanical, Manufacturing and Process Plant Engineering 2017, ICMMPE 2017, 22nd–23rd November 2017, Parkroyal HotelBatu Ferringhi, Penang; Malaysia. http://iopscience.iop.org/article/10.1088/1757-899X/328/1/012019/pdf 10.1088/1757-899X/328/1/012019 |
institution |
Universiti Islam Antarabangsa Malaysia |
building |
IIUM Library |
collection |
Institutional Repository |
continent |
Asia |
country |
Malaysia |
content_provider |
International Islamic University Malaysia |
content_source |
IIUM Repository (IREP) |
url_provider |
http://irep.iium.edu.my/ |
language |
English English |
topic |
TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery |
spellingShingle |
TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery Tanasta, Z. Muhamad, Pauziah Kuwano, Noriyuki Mohd Yatim, Norfazrina Hayati Unuh, Mohd Hishamuddin Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment |
description |
Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as
components in functional devices. Besides good thermal conductivity, it also has a high band gap in
emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However,
lattice mismatch between both materials has caused defects to exist along the microstructure of AlN
thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment
has been proved by the previous researcher to be the best method to improve the microstructure of
Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two
hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using
Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature
of 1500 ℃. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as
inversion domain. Therefore, this paper is about to extract the matters occurred during the process of
producing high quality Aluminium Nitride thin films and the ways to overcome this problem. |
format |
Conference or Workshop Item |
author |
Tanasta, Z. Muhamad, Pauziah Kuwano, Noriyuki Mohd Yatim, Norfazrina Hayati Unuh, Mohd Hishamuddin |
author_facet |
Tanasta, Z. Muhamad, Pauziah Kuwano, Noriyuki Mohd Yatim, Norfazrina Hayati Unuh, Mohd Hishamuddin |
author_sort |
Tanasta, Z. |
title |
Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment |
title_short |
Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment |
title_full |
Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment |
title_fullStr |
Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment |
title_full_unstemmed |
Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment |
title_sort |
reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment |
publisher |
Institute of Physics Publishing |
publishDate |
2018 |
url |
http://irep.iium.edu.my/65199/1/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_conference%20article.pdf http://irep.iium.edu.my/65199/2/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_scopus.pdf http://irep.iium.edu.my/65199/ http://iopscience.iop.org/article/10.1088/1757-899X/328/1/012019/pdf |
_version_ |
1643617539968729088 |
score |
13.18916 |