Silicon compatible acoustic wave resonators: design, fabrication and performance

Continuous advancement in wireless technology and silicon microfabrication has fueled exciting growth in wireless products. The bulky size of discrete vibrating mechanical devices such as quartz crystals and surface acoustic wave resonators impedes the ultimate miniaturization of single-chip tran...

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Main Authors: Md Ralib @ Md Raghib, Aliza 'Aini, Nordin, Anis Nurashikin
Format: Article
Language:English
Published: IIUM Press 2014
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Online Access:http://irep.iium.edu.my/41610/1/437-2144-2-PB.pdf
http://irep.iium.edu.my/41610/
http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/437
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spelling my.iium.irep.416102016-03-17T01:36:44Z http://irep.iium.edu.my/41610/ Silicon compatible acoustic wave resonators: design, fabrication and performance Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Continuous advancement in wireless technology and silicon microfabrication has fueled exciting growth in wireless products. The bulky size of discrete vibrating mechanical devices such as quartz crystals and surface acoustic wave resonators impedes the ultimate miniaturization of single-chip transceivers. Fabrication of acoustic wave resonators on silicon allows complete integration of a resonator with its accompanying circuitry. Integration leads to enhanced performance, better functionality with reduced cost at large volume production. This paper compiles the state-of-the-art technology of silicon compatible acoustic resonators, which can be integrated with interface circuitry. Typical acoustic wave resonators are surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators. Performance of the resonator is measured in terms of quality factor, resonance frequency and insertion loss. Selection of appropriate piezoelectric material is significant to ensure sufficient electromechanical coupling coefficient is produced to reduce the insertion loss. The insulating passive SiO2 layer acts as a low loss material and aims to increase the quality factor and temperature stability of the design. The integration technique also is influenced by the fabrication process and packaging. Packageless structure using AlN as the additional isolation layer is proposed to protect the SAW device from the environment for high reliability. Advancement in miniaturization technology of silicon compatible acoustic wave resonators to realize a single chip transceiver system is still needed IIUM Press 2014 Article REM application/pdf en http://irep.iium.edu.my/41610/1/437-2144-2-PB.pdf Md Ralib @ Md Raghib, Aliza 'Aini and Nordin, Anis Nurashikin (2014) Silicon compatible acoustic wave resonators: design, fabrication and performance. IIUM Engineering Journal, 15 (2). pp. 23-41. ISSN 1511-788X http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/437
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
topic TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Md Ralib @ Md Raghib, Aliza 'Aini
Nordin, Anis Nurashikin
Silicon compatible acoustic wave resonators: design, fabrication and performance
description Continuous advancement in wireless technology and silicon microfabrication has fueled exciting growth in wireless products. The bulky size of discrete vibrating mechanical devices such as quartz crystals and surface acoustic wave resonators impedes the ultimate miniaturization of single-chip transceivers. Fabrication of acoustic wave resonators on silicon allows complete integration of a resonator with its accompanying circuitry. Integration leads to enhanced performance, better functionality with reduced cost at large volume production. This paper compiles the state-of-the-art technology of silicon compatible acoustic resonators, which can be integrated with interface circuitry. Typical acoustic wave resonators are surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators. Performance of the resonator is measured in terms of quality factor, resonance frequency and insertion loss. Selection of appropriate piezoelectric material is significant to ensure sufficient electromechanical coupling coefficient is produced to reduce the insertion loss. The insulating passive SiO2 layer acts as a low loss material and aims to increase the quality factor and temperature stability of the design. The integration technique also is influenced by the fabrication process and packaging. Packageless structure using AlN as the additional isolation layer is proposed to protect the SAW device from the environment for high reliability. Advancement in miniaturization technology of silicon compatible acoustic wave resonators to realize a single chip transceiver system is still needed
format Article
author Md Ralib @ Md Raghib, Aliza 'Aini
Nordin, Anis Nurashikin
author_facet Md Ralib @ Md Raghib, Aliza 'Aini
Nordin, Anis Nurashikin
author_sort Md Ralib @ Md Raghib, Aliza 'Aini
title Silicon compatible acoustic wave resonators: design, fabrication and performance
title_short Silicon compatible acoustic wave resonators: design, fabrication and performance
title_full Silicon compatible acoustic wave resonators: design, fabrication and performance
title_fullStr Silicon compatible acoustic wave resonators: design, fabrication and performance
title_full_unstemmed Silicon compatible acoustic wave resonators: design, fabrication and performance
title_sort silicon compatible acoustic wave resonators: design, fabrication and performance
publisher IIUM Press
publishDate 2014
url http://irep.iium.edu.my/41610/1/437-2144-2-PB.pdf
http://irep.iium.edu.my/41610/
http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/437
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score 13.160551