Reverse leakage current mechanisms in quantum dot laser structures

• Main Authors: Hasbullah, Nurul Fadzlin, David, John P. R.
• Format: Conference or Workshop Item
• Language: English; English
• Published: 2011
• Subjects: TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
• Online Access: http://irep.iium.edu.my/17653/1/IEEE_MnN_vs_7.pdf; http://irep.iium.edu.my/17653/4/Reverse_leakage_current_mechanisms_in_quantum.pdf; http://irep.iium.edu.my/17653/; http://dx.doi.org/10.1109/RSM.2011.6088285

Dark current-voltage measurements undertaken on a series of InAs based quantum dot laser structures show significant variations depending on the growth conditions of the GaAs barrier layer. A systematic study of their temperature dependence suggests that the main mechanism determining the rever...