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Effect of modulation p-doping on the optical properties of quantum dot laser structure

Temperature dependence electroluminescence (EL) measurements have been performed on In(Ga)As/ GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. It is found that the IEL decreases with increasing temperature with the size of reduction decreases with increasing doping lev...

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Main Authors: Hasbullah, Nurul Fadzlin, David, J. P. R., Mowbray, D. J.
Format: Conference or Workshop Item
Language:English
Published: 2010
Subjects:
TK7885 Computer engineering
Online Access:http://irep.iium.edu.my/1477/1/PERFIKNFH-revised.pdf
http://irep.iium.edu.my/1477/
http://fet.mmu.edu.my/perfik2010/
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spelling my.iium.irep.14772012-02-28T03:07:05Z http://irep.iium.edu.my/1477/ Effect of modulation p-doping on the optical properties of quantum dot laser structure Hasbullah, Nurul Fadzlin David, J. P. R. Mowbray, D. J. TK7885 Computer engineering Temperature dependence electroluminescence (EL) measurements have been performed on In(Ga)As/ GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. It is found that the IEL decreases with increasing temperature with the size of reduction decreases with increasing doping level. Activation energies derived from the temperature dependence results shows that the values increases with increasing doping. This is attributed to an increased Coulombic attraction between the extrinsic holes and injected electrons. 2010 Conference or Workshop Item REM application/pdf en http://irep.iium.edu.my/1477/1/PERFIKNFH-revised.pdf Hasbullah, Nurul Fadzlin and David, J. P. R. and Mowbray, D. J. (2010) Effect of modulation p-doping on the optical properties of quantum dot laser structure. In: 2010 Malaysia National Conference on Physics (PERFIK 2010), 27-30 October, 2010, Lumut, Perak, Malaysia. http://fet.mmu.edu.my/perfik2010/ doi:10.1063/1.3573710
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
topic TK7885 Computer engineering
spellingShingle TK7885 Computer engineering
Hasbullah, Nurul Fadzlin
David, J. P. R.
Mowbray, D. J.
Effect of modulation p-doping on the optical properties of quantum dot laser structure
description Temperature dependence electroluminescence (EL) measurements have been performed on In(Ga)As/ GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. It is found that the IEL decreases with increasing temperature with the size of reduction decreases with increasing doping level. Activation energies derived from the temperature dependence results shows that the values increases with increasing doping. This is attributed to an increased Coulombic attraction between the extrinsic holes and injected electrons.
format Conference or Workshop Item
author Hasbullah, Nurul Fadzlin
David, J. P. R.
Mowbray, D. J.
author_facet Hasbullah, Nurul Fadzlin
David, J. P. R.
Mowbray, D. J.
author_sort Hasbullah, Nurul Fadzlin
title Effect of modulation p-doping on the optical properties of quantum dot laser structure
title_short Effect of modulation p-doping on the optical properties of quantum dot laser structure
title_full Effect of modulation p-doping on the optical properties of quantum dot laser structure
title_fullStr Effect of modulation p-doping on the optical properties of quantum dot laser structure
title_full_unstemmed Effect of modulation p-doping on the optical properties of quantum dot laser structure
title_sort effect of modulation p-doping on the optical properties of quantum dot laser structure
publishDate 2010
url http://irep.iium.edu.my/1477/1/PERFIKNFH-revised.pdf
http://irep.iium.edu.my/1477/
http://fet.mmu.edu.my/perfik2010/
_version_ 1643604797964681216
score 13.160551

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