Prediction of Peak Junction Temperature of Semiconductor Devices: A Simulation Study

• Main Author: Mohd Suhaimi, Nor Atiqah b
• Format: Final Year Project
• Language: English
• Published: IRC 2016
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://utpedia.utp.edu.my/17087/1/Final%20Dissertation%20NOR%20ATIQAH%20BINTI%20MOHD%20SUHAIMI%2016053.pdf; http://utpedia.utp.edu.my/17087/

Thermal effects have become increasingly important as devices get smaller on-chip. Components temperature on Printed Circuit Board (PCB) will increase due to the thermal interaction between the components, thus, effects its performance. The concern on reliability and performance of the semiconductor devices is one of the main things that the designers should take into account. Due to this problem, thermal control system can be used in order to achieve high performance of electronic system. In this project, it will focus on discretizing two-dimensional heat conduction equation using numerical approach to predict the peak junction temperature of semiconductor devices. The numerical approach will be divided into two main stages. For the first stage, Backward Time, Centered Space (BTCS) finite difference is used to discretize two-dimensional heat conduction equation.