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BACKEND DESIGN OF WIDEBAND LOW NOISE AMPLIFIER USING 130 NM RF CMOS TECHNOLOGY

Low Noise Amplifier (LNA) is widely applied nowadays for amplify very weak signals usually captured by antenna with reduced noise due to the gain of the LNA. Thus the main concern in this paper is in designing an LNA for ultra-wideband which cover frequency ranging from 3.1 GHz to 10.6 GHz. The desi...

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Main Author: Junaidi, Muhammad Syafiq
Format: Final Year Project
Language:English
Published: IRC 2015
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://utpedia.utp.edu.my/15572/1/Dissertation%2014662.pdf
http://utpedia.utp.edu.my/15572/
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spelling my-utp-utpedia.155722017-01-25T09:36:05Z http://utpedia.utp.edu.my/15572/ BACKEND DESIGN OF WIDEBAND LOW NOISE AMPLIFIER USING 130 NM RF CMOS TECHNOLOGY Junaidi, Muhammad Syafiq TK Electrical engineering. Electronics Nuclear engineering Low Noise Amplifier (LNA) is widely applied nowadays for amplify very weak signals usually captured by antenna with reduced noise due to the gain of the LNA. Thus the main concern in this paper is in designing an LNA for ultra-wideband which cover frequency ranging from 3.1 GHz to 10.6 GHz. The design of the circuit is implemented using the 130 nm complementary metal-oxide semiconductor (CMOS) technology. Comparative studies have been done between inductive degeneration and common gate configuration with special consideration in terms of the corresponding noise figure. IRC 2015-01 Final Year Project NonPeerReviewed application/pdf en http://utpedia.utp.edu.my/15572/1/Dissertation%2014662.pdf Junaidi, Muhammad Syafiq (2015) BACKEND DESIGN OF WIDEBAND LOW NOISE AMPLIFIER USING 130 NM RF CMOS TECHNOLOGY. IRC, Universiti Teknologi PETRONAS. (Unpublished)
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Electronic and Digitized Intellectual Asset
url_provider http://utpedia.utp.edu.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Junaidi, Muhammad Syafiq
BACKEND DESIGN OF WIDEBAND LOW NOISE AMPLIFIER USING 130 NM RF CMOS TECHNOLOGY
description Low Noise Amplifier (LNA) is widely applied nowadays for amplify very weak signals usually captured by antenna with reduced noise due to the gain of the LNA. Thus the main concern in this paper is in designing an LNA for ultra-wideband which cover frequency ranging from 3.1 GHz to 10.6 GHz. The design of the circuit is implemented using the 130 nm complementary metal-oxide semiconductor (CMOS) technology. Comparative studies have been done between inductive degeneration and common gate configuration with special consideration in terms of the corresponding noise figure.
format Final Year Project
author Junaidi, Muhammad Syafiq
author_facet Junaidi, Muhammad Syafiq
author_sort Junaidi, Muhammad Syafiq
title BACKEND DESIGN OF WIDEBAND LOW NOISE AMPLIFIER USING 130 NM RF CMOS TECHNOLOGY
title_short BACKEND DESIGN OF WIDEBAND LOW NOISE AMPLIFIER USING 130 NM RF CMOS TECHNOLOGY
title_full BACKEND DESIGN OF WIDEBAND LOW NOISE AMPLIFIER USING 130 NM RF CMOS TECHNOLOGY
title_fullStr BACKEND DESIGN OF WIDEBAND LOW NOISE AMPLIFIER USING 130 NM RF CMOS TECHNOLOGY
title_full_unstemmed BACKEND DESIGN OF WIDEBAND LOW NOISE AMPLIFIER USING 130 NM RF CMOS TECHNOLOGY
title_sort backend design of wideband low noise amplifier using 130 nm rf cmos technology
publisher IRC
publishDate 2015
url http://utpedia.utp.edu.my/15572/1/Dissertation%2014662.pdf
http://utpedia.utp.edu.my/15572/
_version_ 1739832146366824448
score 13.160551

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