Growth of gallium nitride thin film with the aid of polymethyl methacrylate

Wurtzite structure gallium nitride (GaN) thin film was grown on a c-plane sapphire (0001) substrate through spin coating method followed by nitridation process. Readily available and cheap gallium (III) nitrate hydrate (Ga(NO3)3·xH2O) powder was used as the gallium source. Besides that, ethanol-base...

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Bibliographic Details
Main Authors: C.Y., Fong, S.S., Ng, F.K., Yam, Abu Hassan, H., Hassan, Z.
Format: Article
Language:English
Published: Universiti Kebangsaan Malaysia 2014
Online Access:http://journalarticle.ukm.my/8156/1/17_C.Y._Fong.pdf
http://journalarticle.ukm.my/8156/
http://www.ukm.my/jsm/
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