Growth of gallium nitride thin film with the aid of polymethyl methacrylate
Wurtzite structure gallium nitride (GaN) thin film was grown on a c-plane sapphire (0001) substrate through spin coating method followed by nitridation process. Readily available and cheap gallium (III) nitrate hydrate (Ga(NO3)3·xH2O) powder was used as the gallium source. Besides that, ethanol-base...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universiti Kebangsaan Malaysia
2014
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| Online Access: | http://journalarticle.ukm.my/8156/1/17_C.Y._Fong.pdf http://journalarticle.ukm.my/8156/ http://www.ukm.my/jsm/ |
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