ICP-RIE dry etching using Cl2-based on GaN
In this study, the plasma characteristics and GaN etch properties of inductively coupled Cl2/Ar and Cl2/H2 plasmas were investigated. Our results showed that inductively coupled plasma (ICP) etching of gallium nitride by using Cl2/Ar and Cl2/H2 were possible to meet the requirements (anisotropy, h...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universiti Kebangsaan Malaysia
2011
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| Online Access: | http://journalarticle.ukm.my/2454/1/18_Siti_Azlina.pdf http://journalarticle.ukm.my/2454/ http://www.ukm.my/jsm/ |
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