Switching characteristics of SRO-MISS devices
The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS) device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been studied at room temperature. The SRO films were deposited by atmospheric pressure chemical vapour deposition (APCvD) at 650°C with SiH4 a...
Saved in:
Main Authors: | Burhanuddin Yeop Majfis,, M. J. Morant, |
---|---|
Format: | Article |
Published: |
1991
|
Online Access: | http://journalarticle.ukm.my/1293/ http://www.ukm.my/jkukm/index.php/jkukm |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Structural, electrical properties and magnetoresistive effect in the (La₁-ₓDyₓ)ₒ.₆₇SRₒ.₃₃MNO₃ compound
by: Lee, O. J., et al.
Published: (2005) -
Analysis of the physical, structural and optical characteristics of Dy3+-doped MgO–SrO–B2O3 glass systems
by: Ichoja, A., et al.
Published: (2019) -
School Resource Officer (Sro) Competencies In Dealing With High School Students Criminal Behavior Based On SPPTP
by: Mat Aris, Azizi, et al.
Published: (2016) -
SMS based device switching
by: Ng, Shao Kay
Published: (2013) -
Kinetic modeling of transesterification of refined palm oil to produce biodiesel using Strontium Oxide(SrO)as a heterogeneous catalyst
by: Muhammad Fais, Haron
Published: (2013)