Switching characteristics of SRO-MISS devices
The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS) device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been studied at room temperature. The SRO films were deposited by atmospheric pressure chemical vapour deposition (APCvD) at 650°C with SiH4 a...
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| Main Authors: | , |
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| Format: | Article |
| Published: |
1991
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| Online Access: | http://journalarticle.ukm.my/1293/ http://www.ukm.my/jkukm/index.php/jkukm |
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| Summary: | The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS)
device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been
studied at room temperature. The SRO films were deposited by atmospheric pressure
chemical vapour deposition (APCvD) at 650°C with SiH4 and N20 reactant gases and
N2 carrier. The reactant gas phase ratio, R, varies from 0.09 to 0.25 and the
deposition time from 0.6 to 2 minutes |
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