Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

• Main Authors: Norhakim, N., Hawari, H.F., Burhanudin, Z.A.
• Format: Article
• Published: Institute of Electrical and Electronics Engineers Inc. 2022
• Online Access: http://scholars.utp.edu.my/id/eprint/33851/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124229511&doi=10.1109%2fACCESS.2022.3147832&partnerID=40&md5=33d7c64f9b1f15590e8eed8a51ce5cc3

Graphene has been extensively investigated in the context of electronic components due to its attractive properties, such as high carrier mobility and saturation velocity. In the past decade, the graphene field-effect transistor (GFET) has been considered one of the potential devices to be used in future radio frequency (RF) applications and can help usher in the Internet of Things and the 5G communication network. This review presents recent developments of GFETs in RF applications with a focus on components such as amplifiers, frequency multipliers, phase shifters, mixers, and oscillators. Initially, the figures of merit (FoMs) for the GFET are briefly described to understand how they affect these RF components. Subsequently, the FoMs of GFET-based RF components are compared with other non-GFET-based RF components. It is found that, due to its zero-band gap and ambipolar characteristics, GFETs are more suitable for use in frequency multiplier and phase shifter applications, outperforming non-GFET-based RF components. Finally, future research on GFETs themselves as well as GFET-based RF components is recommended. This review provides valuable insights into such components that could give rise to innovative applications in industry. © 2013 IEEE.