The Study of Q-Factor in High Frequency Diode-Clamped Resonant Gate Driver Circuit
The analysis of Q-factor in high frequency resonant gate driver circuit is presented in this work. It is based on the variation of resonant inductor values in the diode-clamped resonant gate driver circuit. At high switching frequency, a lower value of inductance is preferred. However this will...
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| Main Authors: | , |
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| Format: | Article |
| Published: |
2009
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| Subjects: | |
| Online Access: | http://eprints.utp.edu.my/4393/1/Paper_%5B13%5D.pdf http://eprints.utp.edu.my/4393/ |
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