Carbon nanotube field effect transistor (Cntfet) and resistive random access memory (rram) based ternary combinational logic circuits

• Main Authors: Zahoor, F., Hussin, F.A., Khanday, F.A., Ahmad, M.R., Nawi, I.M., Ooi, C.Y., Rokhani, F.Z.
• Format: Article
• Published: MDPI AG 2021
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85099423967&doi=10.3390%2felectronics10010079&partnerID=40&md5=b25d78f6fb91da432e7bb58abd936343; http://eprints.utp.edu.my/23914/

The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared to that of existing binary circuits is highly impressive. Recently, MVL circuits have attracted significant attention for the design of digital systems. Carbon nanotube field effect transistors (CN...