Temperature variation operation of mixed-VT 3T GC-eDRAM for low power applications in 2Kbit memory array

• Main Authors: Abdo, Hussien, Alias, N. Ezaila, Hamzah, Afiq, Kamisian, Izam, Tan, M. L. Peng, Sheikh, U. Ullah
• Format: Article
• Language: English
• Published: Penerbit UTHM 2022
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/99444/1/NurulEzailaAlias2022_TemperatureVariationOperationofMixedVT3TGCeDRAM.pdf; http://eprints.utm.my/id/eprint/99444/; http://dx.doi.org/10.30880/ijie.2022.14.03.021

Embedded memories were once utilized to transfer information between the CPU and the main memory. The cache storage in most traditional computers was static-random-access-memory (SRAM). Other memory technologies, such as embedded dynamic random-access memory (eDRAM) and spin-transfer-torque random-a...