Asymmetrical multilevel inverter topology with reduced power semiconductor devices
In this paper, a new single-phase asymmetrical multilevel inverter topology is proposed. The topology is capable of producing n-level output voltage with reduced device counts. It is achieved by arranging available switches and dc sources to obtain maximum combinations of addition and subtraction of...
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my.utm.972122022-09-23T03:59:08Z http://eprints.utm.my/id/eprint/97212/ Asymmetrical multilevel inverter topology with reduced power semiconductor devices Arif, M. Saad Md. Ayob, Shahrin Salam, Zainal TK Electrical engineering. Electronics Nuclear engineering In this paper, a new single-phase asymmetrical multilevel inverter topology is proposed. The topology is capable of producing n-level output voltage with reduced device counts. It is achieved by arranging available switches and dc sources to obtain maximum combinations of addition and subtraction of the input dc sources. To verify the viability of the proposed topology, circuit models for nine-level, 25-level and 67-level inverter are developed and simulated in Matlab-Simulink software. Experimental results of the proposed nine-level inverter prototype, developed in the laboratory, are presented. A low frequency switching strategy for nine-level inverter is also presented in this work. Comparison between the existing multilevel topologies shows that the proposed circuit requires less number of power switches and dc sources to produce the same number of output level. 2017 Conference or Workshop Item PeerReviewed Arif, M. Saad and Md. Ayob, Shahrin and Salam, Zainal (2017) Asymmetrical multilevel inverter topology with reduced power semiconductor devices. In: 2016 IEEE Industrial Electronics and Applications Conference, IEACon 2016, 20 - 22 November 2016, Kota Kinabalu, Malaysia. http://dx.doi.org/10.1109/IEACON.2016.8067349 |
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TK Electrical engineering. Electronics Nuclear engineering Arif, M. Saad Md. Ayob, Shahrin Salam, Zainal Asymmetrical multilevel inverter topology with reduced power semiconductor devices |
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In this paper, a new single-phase asymmetrical multilevel inverter topology is proposed. The topology is capable of producing n-level output voltage with reduced device counts. It is achieved by arranging available switches and dc sources to obtain maximum combinations of addition and subtraction of the input dc sources. To verify the viability of the proposed topology, circuit models for nine-level, 25-level and 67-level inverter are developed and simulated in Matlab-Simulink software. Experimental results of the proposed nine-level inverter prototype, developed in the laboratory, are presented. A low frequency switching strategy for nine-level inverter is also presented in this work. Comparison between the existing multilevel topologies shows that the proposed circuit requires less number of power switches and dc sources to produce the same number of output level. |
format |
Conference or Workshop Item |
author |
Arif, M. Saad Md. Ayob, Shahrin Salam, Zainal |
author_facet |
Arif, M. Saad Md. Ayob, Shahrin Salam, Zainal |
author_sort |
Arif, M. Saad |
title |
Asymmetrical multilevel inverter topology with reduced power semiconductor devices |
title_short |
Asymmetrical multilevel inverter topology with reduced power semiconductor devices |
title_full |
Asymmetrical multilevel inverter topology with reduced power semiconductor devices |
title_fullStr |
Asymmetrical multilevel inverter topology with reduced power semiconductor devices |
title_full_unstemmed |
Asymmetrical multilevel inverter topology with reduced power semiconductor devices |
title_sort |
asymmetrical multilevel inverter topology with reduced power semiconductor devices |
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2017 |
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http://eprints.utm.my/id/eprint/97212/ http://dx.doi.org/10.1109/IEACON.2016.8067349 |
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13.159267 |